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Influence of ion implantation on the quality of 4H-SiC CVD epitaxial layers
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2001 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 184, no 04-jan, 323-329 p.Article in journal (Refereed) Published
Abstract [en]

The effect of ion implantation doping (ID) with high doses of Al followed by short high-temperature annealing of n-type 4H-SiC epitaxial layers grown by chemical vapor deposition (CVD) has been studied. The comparative investigations of the structural and electrical properties, lateral and as a function of depth, in the CVD layers before and after Al ID p(+)n junction formations were determined by several different methods. Structural improvement of the CVD epitaxial layers close to Al ID p(+)n junction positions was revealed for the first time.

Place, publisher, year, edition, pages
2001. Vol. 184, no 04-jan, 323-329 p.
Keyword [en]
silicon carbide, ion implantation, p-n junctions, defects
Identifiers
URN: urn:nbn:se:kth:diva-21211ISI: 000173000100054OAI: oai:DiVA.org:kth-21211DiVA: diva2:339908
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Hallén, Anders.

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