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High performance films of binary system SrTiO3-PbZr0.52Ti0.48O3 on sapphire
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-8774-9302
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-7409-575X
2001 (English)In: Integrated Ferroelectrics, ISSN 1058-4587, E-ISSN 1607-8489, Vol. 39, no 1-4, 351-358 p.Article in journal (Refereed) Published
Abstract [en]

Continuous series of solid solutions x.SrTiO3-(1-x).PbZr0.52Ti0.48O3 (SPZT) have been grown by pulsed laser deposition technique onto La0.7Sr0.3CoO3/Al2O3(01 (1) under bar2) single crystal. Films properties have been characterized in Au/SPZT/La0.7Sr0.3CoO3(LSCO)/Al2O3 vertical capacitive cell. X-ray diffraction shows SPZT/LSCO bilayer grows in strict epitaxial relationship with sapphire substrate: (001) SPZT parallel to (001) LSCO parallel to (01 (1) under bar2) Al2O3; [010] SPZT parallel to [010] LSCO parallel to [421] Al2O3. LSCO layer was found to be tensile strained, while SPZT film experiences tetragonal distortions c/a -1 approximate to 0.86% which are much lower than 2.73% in pure PZT ceramics. Curie temperature in SPZT film has been tailored continuously in the explored temperature range 77 K to 400 K by controlling SrTiO3:PZT ratio. Processing parameters have been optimized to get the highest tunability factor K = epsilon'(0) - epsilon'(V)/epsilon'(0) x 1/tandelta . SrTiO3:PZT=83:17 film exhibits superior properties: at I kHz maximum dielectric perinittivity and minimum loss tandelta were found to be 870 and 0.005, respectively; while K-factor exceeds value of 60 in the temperature range 280 to 350 degreesC reaching the maximum value of 64 at 325 degreesC. SPZT films can withstand prolonged pre-breakdown electric field and has resistivity as high as 3.5 10(12) Omega cm at 186 kV/cm.

Place, publisher, year, edition, pages
2001. Vol. 39, no 1-4, 351-358 p.
Keyword [en]
epitaxial films, tailoring ferroelectricity by alloying, low loss, voltage tunability, thin-films
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-21226DOI: 10.1080/10584580108011958ISI: 000173066800038OAI: oai:DiVA.org:kth-21226DiVA: diva2:339924
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved
In thesis
1. Electronic materials: growth and characterisation
Open this publication in new window or tab >>Electronic materials: growth and characterisation
2005 (English)Doctoral thesis, comprehensive summary (Other scientific)
Abstract [en]

In this thesis the InSb(111), InAs(111) and GaSb(001) surfaces have been studied by means of time- and angle-resolved photoemission spectroscopy based upon the femtosecond laser system. The pump-and-probe technique allows to analyse both electron states in the valence band and normally unpopulated electron states above the valence band, which can be occupied by transiently excited carriers at the optically pumped surface. The life time of excited carriers is analysed by controlling over the time delay between pump and probe pulses. Experimental studies of the InSb(111) surface and comparison with a previously studied InSb(110) surface show electron excitations in the bulk region with a minor surface contribution. Time-resolved experiments of carrier dynamics at the polar InAs(111)A and InAs(111)B surfaces show about the same life time of excited carriers, while no populated states above the valence band maximum have been found at the InAs(111)A due to the charge removal. Surface intergap electron states have been found at the GaSb(001) surface located at ~250 meV above the valence band maximum. Angle-resolved experiments showed a strong confinement of this state at the centre of the surface Brillouin zone.

A new two dimensional angle-resolved multi-anode analyser for the femtosecond laser photoemission setup has been constructed. The analyser can resolve a cone opening angle of ~1º at a drift distance of ~0.5 m with an energy resolution of ~125 meV.

A continuous series of binary system SrTiO3–PbZr0.52Ti0.48O3 has been grown by pulsed laser deposition (PLD) on sapphire substrate with crystalline quality control by x-ray diffraction (XRD). The maximum tunability has been tailored to room temperature, where STO�PZT (71/29) composition shows superior performance. A PbZr0.52Ti0.48O3 thin film pressure sensor has been fabricated by PLD and characterised by XRD and electrical measurements. The piezoelectric constant was found to be ~20 % higher compared to the bulk ceramics. A ferroelectric thin film electro-optical cell Na0.5K0.5NbO3/La0.5Sr0.5CoO3 (NKN/LSCO) on sapphire has been fabricated by PLD. Refractive indices and electro-optical coefficient of the cell were characterised by prism coupling refractometry. The tunability of the PLD fabricated 2 μm slot NKN thin film interdigital capacitor has been found ~23 % at 40 V bias voltage and frequency 1 MHz.

Place, publisher, year, edition, pages
Stockholm: KTH, 2005. vii, 80 p.
Series
Trita-FYS, ISSN 0280-316X ; 3077
Keyword
Electrophysics, Photoemission, Ultra-short laser pulse, Thin film, Laser deposition, InSb, InAs, GaSb, Ferroelectrics, Elektrofysik
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-144 (URN)91-7283-967-8 (ISBN)
Public defence
2005-03-18, Kollegiesalen, Valhallavägen 79, Stockholm, 10:15
Opponent
Supervisors
Note
QC 20101015Available from: 2005-03-07 Created: 2005-03-07 Last updated: 2010-10-15Bibliographically approved

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Khartsev, SergiyKarlsson, Ulf O.

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