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Thickness dependent performance of Na0.5K0.5NbO3/sapphire thin film varactors
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2001 (English)In: Integrated Ferroelectrics, ISSN 1058-4587, Vol. 39, no 1-4, 1353-1360 p.Article in journal (Refereed) Published
Abstract [en]

Perfect c-axis oriented Na0.5K0.5NbO3 (NKN) films have been pulsed laser deposited on Al2O3(01 (1) under bar2) single crystals (r-cut sapphire) for voltage tunable microwave device applications. Thickness dependence of dielectric performance of the NKN/sapphire interdigital capacitors (IDCs) has been studied. 40 V bias tunability and dielectric loss tandelta of 4 burr slot IDCs have been found to be 24.6 % and 2.86 % for 1.2 mum thick NKN film, and 6.1 % and 0.83 % for 0.14 mum thick NKN film, respectively. Low leakage currents and high breakdown voltages are observed in these structures.

Place, publisher, year, edition, pages
2001. Vol. 39, no 1-4, 1353-1360 p.
Keyword [en]
tunable ferroelectric film, thickness dependence, interdigital capacitor, capacitors
URN: urn:nbn:se:kth:diva-21227ISI: 000173066800044OAI: diva2:339925
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Grishin, Alexander M.
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