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Dielectric properties and Schottky barriers in silver tantalate-niobate thin film capacitors
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2001 (English)In: Integrated Ferroelectrics, ISSN 1058-4587, Vol. 39, no 1-4, 1361-1368 p.Article in journal (Refereed) Published
Abstract [en]

Submicron thick ferroelectric Ag(Ta,Nb)O-3 films have been pulsed laser deposited on the bulk Pt80Ir20 polycrystalline substrates. They are ferroelectric at temperatures below 125 K with the remnant polarization of 0.4 muC/cm(2) @ 77K and paraelectric at higher temperatures with tandelta @ 100 kHz as low as 0.015. Extensive I-V characterization has been performed in a wide temperature range 77 K to 350 K for vertical Me/Ag(Ta,Nb)O-3/Pt80Ir20 capacitive cells, where the metals Me = Pd, Au, Cr, and Al have been used as a top electrode. The electronic transport in thin Me/Ag(Ta,Nb)O-3/Pt80Ir20 capacitors follows the Schottky emission mechanism with the barrier height for the Pd, Au, Cr, and Al of 0.85, 0.8, 0.74, and 0.69 eV, respectively.

Place, publisher, year, edition, pages
2001. Vol. 39, no 1-4, 1361-1368 p.
Keyword [en]
Ag(Ta,Nb)O-3 films, loss tangent, Schottky emission, barrier height, work function
URN: urn:nbn:se:kth:diva-21228ISI: 000173066800045OAI: diva2:339926
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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