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Stresses in thin films and interconnect lines
KTH, Superseded Departments, Solid Mechanics.ORCID iD: 0000-0002-0307-8917
KTH, Superseded Departments, Solid Mechanics.
2002 (English)In: Microelectronic Engineering, ISSN 0167-9317, E-ISSN 1873-5568, Vol. 60, no 1-2, 17-29 p.Article in journal (Refereed) Published
Abstract [en]

The mechanical behavior of thin films and interconnect lines is investigated. Firstly, theoretical models of thermal stress evolution in thin films and passivated or unpassivated lines are considered. Secondly, the effect of texture in a copper thin film with a columnar grain structure is studied from a theoretical point of view. The film consists of three different constituents with (111), (100) and randomly oriented texture. Global properties as well as local stress distributions are considered in detail within a thermoelastic framework. The results are in qualitative agreement with available experimental results. Implications with regards to plastic behavior are briefly discussed. Finally, the potential of the curvature measurement technique for experimental stress evaluation in thin films is considered for initially flat and curved substrate/film systems.

Place, publisher, year, edition, pages
2002. Vol. 60, no 1-2, 17-29 p.
Keyword [en]
copper, thin films, texture, thermal stress, interconnect lines, strain gradient plasticity, copper-films, curvature measurements, metal interconnects, thermal-stresses, cu, deformation, multilayers, relaxation, evolution
National Category
Mechanical Engineering
Identifiers
URN: urn:nbn:se:kth:diva-21247DOI: 10.1016/S0167-9317(01)00577-9ISI: 000173194900003OAI: oai:DiVA.org:kth-21247DiVA: diva2:339945
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Gudmundson, Peter

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