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Ge-profile design for improved linearity of SiGe double HBTs
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-6459-749X
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-5845-3032
2002 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 23, no 1, 19-21 p.Article in journal (Refereed) Published
Abstract [en]

The influence of Ge-profile design on SiGe HBT linearity-harmonic distortion has been quantified using finite element physical device simulation. It was demonstrated that proper Ge-profile tailoring allows the linearity to be improved for both low- and high-current operation. High injection heterojunction barrier effects are shown to have a significant influence on the higher order harmonies. The influence of the Ge-profile design on linearity was found to be comparable to the influence from the epitaxial collector doping profile.

Place, publisher, year, edition, pages
2002. Vol. 23, no 1, 19-21 p.
Keyword [en]
bipolar technology, device simulation, harmonic distortion, HBT, modeling, SiGe, bipolar-transistors, distortion
Identifiers
URN: urn:nbn:se:kth:diva-21257ISI: 000173259800007OAI: oai:DiVA.org:kth-21257DiVA: diva2:339955
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Malm, B. Gunnar

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