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Ion implantation of silicon carbide
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-8760-1137
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2002 (English)In: Nuclear Instruments and Methods in Physics Reseach B, ISSN 0168-583X, Vol. 186, 186-194 p.Article in journal (Refereed) Published
Abstract [en]

Ion implantation is an important technique for a successful implementation of commercial SiC devices. Much effort has also been devoted to optimising implantation and annealing parameters to improve the electrical device characteristics. However, there is a severe lack of understanding of the fundamental implantation process and the generation and annealing kinetics of point defects and defect complexes. Only very few of the most elementary intrinsic point defects have been unambiguously identified so far. To reach a deeper understanding of the basic mechanisms SiC samples have been implanted with a broad range of ions, energies, doses, etc., and the resulting defects and damage produced in the lattice have been studied with a multitude of characterisation techniques. In this contribution we will review some of the results generated recently and also try to indicate where more research is needed. In particular, deep level transient spectroscopy (DLTS) has been used to investigate point defects at very low doses and transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS) are used for studying the damage build-up at high doses.

Place, publisher, year, edition, pages
2002. Vol. 186, 186-194 p.
Keyword [en]
point defects, damage, annealing, dose rate, dislocation loops, sic epitaxial layers, induced damage, nitrogen, defects, boron, aluminum, temperature, diffusion
URN: urn:nbn:se:kth:diva-21260ISI: 000173279900033OAI: diva2:339958
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Hallén, Anders.Linnarsson, Margareta K
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