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Separation of vacancy and interstitial depth profiles in proton- and boron-implanted silicon
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-8760-1137
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2002 (English)In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 186, 334-338 p.Article in journal (Refereed) Published
Abstract [en]

A new experimental method of studying shifts between concentration-versus-depth profiles of vacancy-type and interstitial-type defects in ion-implanted silicon is demonstrated. The concept is based on deep level transient spectroscopy (DLTS) measurements utilizing the filling pulse variation technique. The vacancy profile. represented by the vacancy-oxygen center and the interstitial profile, represented by the substitutional carbon-interstitial carbon pair, are obtained at the same sample temperature by varying the duration of the filling pulse, Thus the two profiles can be recorded with a high relative depth resolution, Point defects have been introduced in low doped float zone n-type silicon by implantation with 6 MeV boron ions and 1.3 MeV protons at room temperature, using low doses. For each implantation condition the peak of the interstitial profile is shown to be displaced by similar to 0.5 mum towards larger depths compared to that of the vacancy profile. This shift is primarily attributed to the preferential forward momentum of recoiling Si atoms, in accordance with theoretical predictions.

Place, publisher, year, edition, pages
2002. Vol. 186, 334-338 p.
Keyword [en]
point defects, silicon, ion implantation, DLTS, transient spectroscopy, dopant diffusion, irradiation, reduction, defects, carbon, traps, si
Identifiers
URN: urn:nbn:se:kth:diva-21261ISI: 000173279900058OAI: oai:DiVA.org:kth-21261DiVA: diva2:339959
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Hallén, Anders.

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