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Defect distributions in silicon implanted with low doses of MeV ions
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-8760-1137
2002 (English)In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 186, 344-348 p.Article in journal (Refereed) Published
Abstract [en]

Deep level transient spectroscopy (DLTS) is used to study the distributions as a function of depth of the single negative divacancy complex in n-type FZ silicon implanted with low doses of H, He and O ions, The energies of the incoming ions are chosen to correspond to the same projected range, i.e. about 24 mum. The defect distribution is found to be relatively broad as compared to Monte Carlo simulations of the initially created vacancy distribution, particularly for the case of proton implantation. Furthermore, it is shown that the yield of divacancies, per generated vacancy, increases slightly with incoming ion mass and is three times higher at half the projected range than in the damage peak.

Place, publisher, year, edition, pages
2002. Vol. 186, 344-348 p.
Keyword [en]
point defects, divacancy, ion implantation, lifetime, low doses, improved gto thyristors, irradiated silicon, proton, electron
Identifiers
URN: urn:nbn:se:kth:diva-21262ISI: 000173279900060OAI: oai:DiVA.org:kth-21262DiVA: diva2:339960
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Hallén, Anders.

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