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Dose-rate influence on the defect production in MeV proton-implanted float-zone and epitaxial n-type silicon
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-8760-1137
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2002 (English)In: Nuclear Instruments and Methods in Physics Reseach B, ISSN 0168-583X, Vol. 186, 375-379 p.Article in journal (Refereed) Published
Abstract [en]

The production of stable vacancy-related point defects in proton-implanted float-zone and epitaxial silicon has been studied in the low dose range ( less than or equal to 10(10)/cm(2)) as a function of dose-rate. The well-known inverse dose-rate effect has been observed in both types of materials with a decrease in the concentration of vacancy-related defects as the dose-rate increases. The effect is less pronounced in oxygen lean epitaxial silicon. Moreover, a continuous decrease of the vacancy-related defect concentration as a function of the flux was measured while a threshold was expected according to previous studies. Both or these results can be explained by a simple calculation, taking into account the influence of the oxygen concentration as well as the influence of the diffusion coefficient of point defects on the inverse dose-rate effect.

Place, publisher, year, edition, pages
2002. Vol. 186, 375-379 p.
Keyword [en]
silicon, proton-implantation, dose-rate, DLTS, transient spectroscopy, electron traps, irradiation
URN: urn:nbn:se:kth:diva-21263ISI: 000173279900066OAI: diva2:339961
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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