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Characterization of heterojunction diodes with hydride vapor phase epitaxy grown AlGaN on 4H-SiC
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-8108-2631
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
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2002 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 91, no 4, 2372-2379 p.Article in journal (Refereed) Published
Abstract [en]

AlGaN/4H-SiC heterojunction diodes with varying composition of Al have been fabricated. Five different compositions were investigated, GaN, Al0.1Ga0.9N, Al0.15Ga0.85N, Al0.3Ga0.7N, and Al0.5Ga0.5N, along with a 4H-SiC homojunction diode for comparison. The turn on voltage was around 1 V, and the ideality factor between 1 and 2 for all heterojunction diodes except for the Al0.3Ga0.7N diode. This diode had an ideality factor between 2 and 3, and also showed a much lower series resistance, indicating a change in transport mechanism across the junction. A tunnel assisted recombination model was analyzed and compared to the extracted values of the GaN diode. The model agreed well with both current-voltage and capacitance-voltage measurements for this diode. This model was not applied to the other samples, since their characteristics could not be explained by a simple mechanism.

Place, publisher, year, edition, pages
2002. Vol. 91, no 4, 2372-2379 p.
Keyword [en]
n-p heterojunctions, ohmic contacts, gan, layers
URN: urn:nbn:se:kth:diva-21284ISI: 000173553800096OAI: diva2:339982
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Zetterling, Carl-MikaelÖstling, Mikael
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