Characterization of heterojunction diodes with hydride vapor phase epitaxy grown AlGaN on 4H-SiC
2002 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 91, no 4, 2372-2379 p.Article in journal (Refereed) Published
AlGaN/4H-SiC heterojunction diodes with varying composition of Al have been fabricated. Five different compositions were investigated, GaN, Al0.1Ga0.9N, Al0.15Ga0.85N, Al0.3Ga0.7N, and Al0.5Ga0.5N, along with a 4H-SiC homojunction diode for comparison. The turn on voltage was around 1 V, and the ideality factor between 1 and 2 for all heterojunction diodes except for the Al0.3Ga0.7N diode. This diode had an ideality factor between 2 and 3, and also showed a much lower series resistance, indicating a change in transport mechanism across the junction. A tunnel assisted recombination model was analyzed and compared to the extracted values of the GaN diode. The model agreed well with both current-voltage and capacitance-voltage measurements for this diode. This model was not applied to the other samples, since their characteristics could not be explained by a simple mechanism.
Place, publisher, year, edition, pages
2002. Vol. 91, no 4, 2372-2379 p.
n-p heterojunctions, ohmic contacts, gan, layers
IdentifiersURN: urn:nbn:se:kth:diva-21284ISI: 000173553800096OAI: oai:DiVA.org:kth-21284DiVA: diva2:339982
QC 201005252010-08-102010-08-10Bibliographically approved