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Sub-f(t) gain resonance of InP/InGaAs-HBTs
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2002 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 49, no 2, 213-220 p.Article in journal (Refereed) Published
Abstract [en]

Advanced npn-InP/InGaAs HBTs are often operated at high current levels for optimum high-speed performance. Because of velocity modulation effects, these transistors may operate in base-pushout although measurements of the cut-off frequency f(t) indicate the opposite. We show that the low mobility of the holes has a strong effect on the transistor operation in this regime, which is only revealed from a dynamic analysis: The unilateral power gain peaks far below f(t) followed by a -40 dB/dec roll-off. The effect was thoroughly analyzed and as a result, we present a simple equivalent circuit model that successfully describes transistors operating in pushout up to very high frequencies.

Place, publisher, year, edition, pages
2002. Vol. 49, no 2, 213-220 p.
Keyword [en]
base-pushout, high-frequency limitations, hole velocity, InP-HBT, Kirk-effect, unilateral power gain, bipolar-transistors, currents
Identifiers
URN: urn:nbn:se:kth:diva-21290ISI: 000173613700001OAI: oai:DiVA.org:kth-21290DiVA: diva2:339988
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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