Change search
ReferencesLink to record
Permanent link

Direct link
Improved automatic parameter extraction of InP-HBT small-signal equivalent circuits
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2002 (English)In: IEEE transactions on microwave theory and techniques, ISSN 0018-9480, E-ISSN 1557-9670, Vol. 50, no 2, 580-583 p.Article in journal (Refereed) Published
Abstract [en]

An improved automatic extraction technique for determination of the element values of an InP heterojunction-bipolar-transistor small-signal T-model is presented. Numerical optimization is shown to yield reproducible and physically relevant results when using a suitable figure-of-merit. The outcome of such an extraction is displayed for a range of operation points and the resulting bias dependencies of the element values is shown to be in good agreement with theoretical effects. The technique is further used to validate the quality of the extraction itself by showing a significant sensitivity to a deliberate error in the value of each element.

Place, publisher, year, edition, pages
2002. Vol. 50, no 2, 580-583 p.
Keyword [en]
HBT, InP, numerical parameter extraction, heterojunction
URN: urn:nbn:se:kth:diva-21302ISI: 000173701700023OAI: diva2:340000
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

Open Access in DiVA

No full text

Search in DiVA

By author/editor
Willen, Bo G.
By organisation
Microelectronics and Information Technology, IMIT
In the same journal
IEEE transactions on microwave theory and techniques

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Total: 22 hits
ReferencesLink to record
Permanent link

Direct link