Formation of C54TiSi(2) on Si(100) using Ti/Mo and Mo/Ti bilayers
2002 (English)In: International Journal of Modern Physics B, ISSN 0217-9792, Vol. 16, no 1-2, 205-212 p.Article in journal (Refereed) Published
The effect of Mo on the formation of C54 TiSi2 on Si (100) substrates is studied using crosssectional transmission electron microscopy. For a Ti/Mo bilayer on Si, the interfacial Mo film reacts with Ti and Si to form C40 (Mo,Ti)Si-2 at 550 degreesC. Crystal grains of metastable C40 TiSi2 and equilibrium C54 TiSi2 are found in the region near the interfacial (Mo,Ti)Si-2 layer due to the template phenomenon. Increasing the temperature to 600 degreesC leads to the growth of C54 TiSi2 throughout the film. No C49 grains can be detected. The findings confirm that the usual sequence for the formation of C54 TiSi2, i.e. the C49 TiSi2 forms first followed by a phase transition to the C54 TiSi2, is altered by the interposed Mo layer. For a Mo/Ti bilayer on Si, the surface Mo layer is found to be present sequentially in (Mo,Ti)(5)Si-3 at 550 degreesC, C49 (Mo,Ti)Si-2 at 600 degreesC and C54 (Mo,Ti)Si-2 at 650 degreesC. The bulk Ti beneath forms the C54 TiSi2 following the usual route through the C49-C54 phase transition. However, this transition is now enhanced, in comparison with the C54 TiSi2 formation with pure Ti, by the C54 (Mo,Ti)Si-2 atop that plays the role as a template precisely as the interfacial C40 (Mo,Ti)Si-2.
Place, publisher, year, edition, pages
2002. Vol. 16, no 1-2, 205-212 p.
interposed layer, c54 phase, temperature, tisi2, mo, molybdenum, mechanism, si
IdentifiersURN: urn:nbn:se:kth:diva-21318ISI: 000173857900029OAI: oai:DiVA.org:kth-21318DiVA: diva2:340016
QC 201005252010-08-102010-08-10Bibliographically approved