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Characterization of strained Si/Si1-xGex/Si heterostructures annealed in oxygen or argon
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-5845-3032
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2002 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 91, no 5, 2708-2712 p.Article in journal (Refereed) Published
Abstract [en]

The strained Si/Si1-xGex/Si layer heterostructure heat treated from 700 degreesC to 950 degreesC in Ar (annealing) or O-2-C2H2Cl2 (oxidation) was characterized using high-resolution x-ray diffraction in combination with Rutherford backscattering. Only small changes to the structure are observed up to 800 degreesC, within the resolution limits of diffraction and backscattering. Severe strain relaxation occurs at 950 degreesC and the heterostructure tends to relax more during annealing in Ar than during oxidation in O-2-C2H2Cl2. The strain relaxation is mainly caused by interdiffusion of Si and Ge rather than formation of misfit dislocations. Diffusion of Si interstitials generated during oxidation into the heterostructure is suggested as the cause responsible for the less pronounced interdiffusion of Si and Ge in the oxidized samples.

Place, publisher, year, edition, pages
2002. Vol. 91, no 5, 2708-2712 p.
Keyword [en]
critical layer thickness, thermal relaxation, enhanced diffusion, silicon, oxidation, model, ge
Identifiers
URN: urn:nbn:se:kth:diva-21357DOI: 10.1063/1.1436290ISI: 000174182400018OAI: oai:DiVA.org:kth-21357DiVA: diva2:340055
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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