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Site-occupying behavior of boron in compensated p-type 4H-SiC grown by sublimation epitaxy
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-0292-224X
2002 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 91, no 5, 3471-3473 p.Article in journal (Refereed) Published
Abstract [en]

Results from electrical and optical measurements of boron in compensated p-type 4H-SiC layers doped with Al, N, and B are reported. The layers were produced by sublimation epitaxy and characterized by secondary ion mass spectrometry, capacitance-voltage, and cathodoluminescence techniques. The boron-related contribution to the net acceptor concentration in the layers as well as the boron-related emission at similar to505 nm are detected for various growth conditions. The effect of the concentrations of the attendant impurities Al and N, concentration ratio of Al to N atoms, and growth rate on the site-occupying behavior of boron in the layers is discussed.

Place, publisher, year, edition, pages
2002. Vol. 91, no 5, 3471-3473 p.
Keyword [en]
chemical-vapor-deposition, deep levels, photoluminescence, 4h
Identifiers
URN: urn:nbn:se:kth:diva-21359DOI: 10.1063/1.1433931ISI: 000174182400136OAI: oai:DiVA.org:kth-21359DiVA: diva2:340057
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Linnarsson, Margareta K.

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