Site-occupying behavior of boron in compensated p-type 4H-SiC grown by sublimation epitaxy
2002 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 91, no 5, 3471-3473 p.Article in journal (Refereed) Published
Results from electrical and optical measurements of boron in compensated p-type 4H-SiC layers doped with Al, N, and B are reported. The layers were produced by sublimation epitaxy and characterized by secondary ion mass spectrometry, capacitance-voltage, and cathodoluminescence techniques. The boron-related contribution to the net acceptor concentration in the layers as well as the boron-related emission at similar to505 nm are detected for various growth conditions. The effect of the concentrations of the attendant impurities Al and N, concentration ratio of Al to N atoms, and growth rate on the site-occupying behavior of boron in the layers is discussed.
Place, publisher, year, edition, pages
2002. Vol. 91, no 5, 3471-3473 p.
chemical-vapor-deposition, deep levels, photoluminescence, 4h
IdentifiersURN: urn:nbn:se:kth:diva-21359DOI: 10.1063/1.1433931ISI: 000174182400136OAI: oai:DiVA.org:kth-21359DiVA: diva2:340057
QC 201005252010-08-102010-08-10Bibliographically approved