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Nitrogen doping of epitaxial silicon carbide
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-0292-224X
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2002 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 236, no 03-jan, 101-112 p.Article in journal (Refereed) Published
Abstract [en]

Intentional doping with nitrogen of 4H- and 6H-SiC has been performed using a hot-wall CVD reactor. The nitrogen doping dependence on the temperature, pressure, C/Si ratio, growth rate and nitrogen flow has been investigated. The nitrogen incorporation for C-face material showed to be C/Si ratio independent, whereas the doping decreased with increasing C/Si ratio for the Si-face material in accordance with the site-competition model. The nitrogen incorporation was constant in a temperature window of 75degreesC on Si-face material indicating a mass transport limited incorporation. Increasing the growth rate resulted in a decrease of nitrogen incorporation on Si-face but an increase on C-face material. Finally, a comparison between previously published results on cold-wall CVD-grown material and the present hot-wall-grown material is presented.

Place, publisher, year, edition, pages
2002. Vol. 236, no 03-jan, 101-112 p.
Keyword [en]
doping, hot wall epitaxy, superconducting materials, chemical-vapor-deposition, growth
Identifiers
URN: urn:nbn:se:kth:diva-21388ISI: 000174437900018OAI: oai:DiVA.org:kth-21388DiVA: diva2:340086
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Linnarsson, Margareta K.

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