Different routes to the formation of C54TiSi(2) in the presence of surface and interface molybdenum: A transmission electron microscopy study
2002 (English)In: Journal of Materials Research, ISSN 0884-2914, Vol. 17, no 4, 784-789 p.Article in journal (Refereed) Published
Direct evidence revealing fundamental differences in sequence of phase formation during the growth of TiSi2 in the presence of an ultrathin surface or interface Mo layer is presented. Results of cross-sectional transmission electron microscopy showed that when the Mo layer was present at the interface between Ti films and Si substrates, C40 (Mo,Ti)Si-2 formed at the interface, and Ti5Si3 grew on top after annealing at 550 degreesC. Additionally, both C54 and C40 TiSi2 were found in the close vicinity of the C40 (Mo,Ti)Si-2 grains. No C49 grains were detected. Raising the annealing temperature to 600 degreesC led to the formation of C54 TiSi2 at the expense of Ti5Si3, and the interfacial C40 (Mo,Ti)Si-2 also began to transform into C54 (Mo,Ti)Si-2 at 600 degreesC. When the Mo was deposited on top of Ti, the silicide film was almost solely composed of C49 TiSi2 at 600 degreesC. However, a small amount of (Mo,Ti)(5)Si-3 was still present in the vicinity of the sample surface. Upon annealing at 650 degreesC, only the C54 phase was found throughout the entire TiSi2 layer with a surface (Mo,Ti)Si, on top of TiSi2 Hence, it was unambiguously shown that in the presence of surface versus interface Mo, different routes were taken to the formation of C54 TiSi2.
Place, publisher, year, edition, pages
2002. Vol. 17, no 4, 784-789 p.
transformation temperature, interposed layer, phase-formation, grain-size, c54 tisi2, c49 tisi2, mo, mechanism
IdentifiersURN: urn:nbn:se:kth:diva-21441ISI: 000174805700013OAI: oai:DiVA.org:kth-21441DiVA: diva2:340139
QC 201005252010-08-102010-08-10Bibliographically approved