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Defect-induced magnetic structure in (Ga1-xMnx)As
KTH, Superseded Departments, Materials Science and Engineering.ORCID iD: 0000-0002-9920-5393
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2002 (English)In: Physical Review Letters, ISSN 0031-9007, Vol. 88, no 18, 187202- p.Article in journal (Refereed) Published
Abstract [en]

We show that magnetic structures involving partial disorder of local magnetic moments on the Mn atoms in (Ga1-xMnx)As lower the total energy, compared to the case of perfect ferromagnetic ordering, when As defects on the Ga sublattice are present. Such magnetic structures are found to be stable for a range of concentrations of As antisites, and this result accounts for the observed magnetic moments and critical temperatures in (Ga1-xMnx)As . We propose an explanation for the stabilization of the partially disordered magnetic structures and conclude that the magnetization and critical temperatures should increase substantially by reducing the number of As antisite defects.

Place, publisher, year, edition, pages
2002. Vol. 88, no 18, 187202- p.
Keyword [en]
first-principles, ferromagnetism, alloys, semiconductors, metals, ga1-xmnxas, energy, approximation, layers, gaas
National Category
Condensed Matter Physics Other Materials Engineering
URN: urn:nbn:se:kth:diva-21491DOI: 10.1103/PhysRevLett.88.187202ISI: 000175192100048OAI: diva2:340189
QC 20100525 NR 20140804Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2012-02-13Bibliographically approved

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Korzhavyi, Pavel A.
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