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Gadolinium trihydride - A new magnetoresistive semiconductor
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-9858-6235
2002 (English)In: Europhysics letters, ISSN 0295-5075, E-ISSN 1286-4854, Vol. 58, no 3, 442-447 p.Article in journal (Refereed) Published
Abstract [en]

Large negative magnetoresistance and magnetisation anomalies are found in epitaxial GdH3-delta films. The zero-field semiconductor-like behavior in the resistivity is completely suppressed at a magnetic field of 120 kOe. Temperature and field dependence of the magnetisation supports short-range ordering in the paramagnetic host, mediated by the vacancy state of trihydride.

Place, publisher, year, edition, pages
2002. Vol. 58, no 3, 442-447 p.
Keyword [en]
metal-insulator-transition, colossal magnetoresistance, hydride films, resistivity, manganites, yttrium
URN: urn:nbn:se:kth:diva-21497ISI: 000175271000020OAI: diva2:340195
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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