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Quantum discreteness effects and flicker fluctuations in tunneling conductivity
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2002 (English)In: Physics of the solid state, ISSN 1063-7834, E-ISSN 1090-6460, Vol. 44, no 5, 843-851 p.Article in journal (Refereed) Published
Abstract [en]

An analysis of events in the tunneling junction shows that the interaction of one-electron processes in a many-electron system may be a source of scale-invariant low-frequency fluctuations of conductivity (the interaction consists in that the quantum probability of an electron transition depends on fast random changes in the environment in the course of the transition, including the changes caused by analogous transitions). The theory relates flicker fluctuations in the tunneling conductivity to the discrete character of the spectrum of electron states and explains the nonlinearity of the noise-current characteristic observed in nanocomposites.

Place, publisher, year, edition, pages
2002. Vol. 44, no 5, 843-851 p.
Keyword [en]
hydrogenated amorphous-silicon, low-frequency noise, 1/f noise, coulomb blockade, thin-films, 1/f-noise, junctions
URN: urn:nbn:se:kth:diva-21502ISI: 000175297300008OAI: diva2:340200
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Grishin, Alexander M.
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