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Growth and characterization of Na0.5K0.5NbO3 thin films on polycrystalline Pt80Ir20 substrates
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2002 (English)In: Journal of Materials Research, ISSN 0884-2914, Vol. 17, no 5, 1183-1191 p.Article in journal (Refereed) Published
Abstract [en]

Na0.5K0.5NbO3 thin films have been deposited onto textured polycrystalline Pt80Ir20 substrates using radio frequency magnetron sputtering. Films were grown in off- and on-axis positions relative to the target at growth temperatures of 500-700 degreesC and sputtering pressures of 1-7 Pa. The deposited films were found to be textured, displaying a mixture of two orientations (001) and (101). Films grown on-axis showed a prefered (001) orientation, while the off-axis films had a (101) orientation. Scanning electron microscopy showed that the morphology of the films was dependent on the substrate position and sputtering pressure. The low-frequency (10 kHz) dielectric constants of the films were found to be in the range of approximately 490-590. Hydrostatic piezoelectric measurements showed that the films were piezoelectric in the as-deposited form with a constant up to 14.5 pC/N.

Place, publisher, year, edition, pages
2002. Vol. 17, no 5, 1183-1191 p.
Keyword [en]
sputter-deposition, epitaxial-growth, mgo
Identifiers
URN: urn:nbn:se:kth:diva-21523ISI: 000175414600042OAI: oai:DiVA.org:kth-21523DiVA: diva2:340221
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Grishin, Alexander M.
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Microelectronics and Information Technology, IMIT
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