Damage evolution and recovery on both Si and C sublattices in Al-implanted 4H-SiC studied by Rutherford backscattering spectroscopy and nuclear reaction analysis
2002 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 91, no 10, 6388-6395 p.Article in journal (Refereed) Published
Damage evolution and subsequent recovery in 4H-SiC epitaxial layers irradiated with 1.1 MeV Al-2(2+) molecular ions at 150 K to ion fluences from 1.5x10(13) to 2.25x10(14) Al cm(-2) were studied by Rutherford backscattering spectroscopy (RBS) and C-12(d,p)C-13 nuclear reaction analysis (NRA) using a 0.94 MeV deuterium (D+) beam in channeling geometry. Disorder on both the Si and C sublattices was measured simultaneously from the RBS scattering and NRA reaction yields. The relative disorder on both sublattices follows a nonlinear dependence on ion fluence that is consistent with a model based on simple defect accumulation and a direct-impact, defect-stimulated process for amorphization. At low ion fluences, the relative disorder on the C sublattice is higher than that on the Si sublattice. Isochronal annealing up to 870 K revealed the existence of three distinct recovery stages at similar to350, 520, and 650 K for low to intermediate damage levels. In highly damaged samples, where a buried amorphous layer is produced, the onset of a fourth recovery stage appears above 800 K. Similar recovery behaviors on both the Si and C sublattices suggests some coupling of recovery processes for Si and C defects.
Place, publisher, year, edition, pages
2002. Vol. 91, no 10, 6388-6395 p.
silicon-carbide, induced amorphization, au recoils, irradiation, accumulation, simulation, disorder, ceramics, crystals, defects
IdentifiersURN: urn:nbn:se:kth:diva-21543DOI: 10.1063/1.1469204ISI: 000175572500020OAI: oai:DiVA.org:kth-21543DiVA: diva2:340241
QC 201005252010-08-102010-08-10Bibliographically approved