Change search
ReferencesLink to record
Permanent link

Direct link
Damage evolution and recovery on both Si and C sublattices in Al-implanted 4H-SiC studied by Rutherford backscattering spectroscopy and nuclear reaction analysis
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-8760-1137
Show others and affiliations
2002 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 91, no 10, 6388-6395 p.Article in journal (Refereed) Published
Abstract [en]

Damage evolution and subsequent recovery in 4H-SiC epitaxial layers irradiated with 1.1 MeV Al-2(2+) molecular ions at 150 K to ion fluences from 1.5x10(13) to 2.25x10(14) Al cm(-2) were studied by Rutherford backscattering spectroscopy (RBS) and C-12(d,p)C-13 nuclear reaction analysis (NRA) using a 0.94 MeV deuterium (D+) beam in channeling geometry. Disorder on both the Si and C sublattices was measured simultaneously from the RBS scattering and NRA reaction yields. The relative disorder on both sublattices follows a nonlinear dependence on ion fluence that is consistent with a model based on simple defect accumulation and a direct-impact, defect-stimulated process for amorphization. At low ion fluences, the relative disorder on the C sublattice is higher than that on the Si sublattice. Isochronal annealing up to 870 K revealed the existence of three distinct recovery stages at similar to350, 520, and 650 K for low to intermediate damage levels. In highly damaged samples, where a buried amorphous layer is produced, the onset of a fourth recovery stage appears above 800 K. Similar recovery behaviors on both the Si and C sublattices suggests some coupling of recovery processes for Si and C defects.

Place, publisher, year, edition, pages
2002. Vol. 91, no 10, 6388-6395 p.
Keyword [en]
silicon-carbide, induced amorphization, au recoils, irradiation, accumulation, simulation, disorder, ceramics, crystals, defects
URN: urn:nbn:se:kth:diva-21543DOI: 10.1063/1.1469204ISI: 000175572500020OAI: diva2:340241
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Hallén, Anders.
By organisation
Microelectronics and Information Technology, IMIT
In the same journal
Journal of Applied Physics

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 15 hits
ReferencesLink to record
Permanent link

Direct link