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Changes in carrier dynamics induced by proton irradiation in quantum dots
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-4606-4865
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2002 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, E-ISSN 1873-2135, Vol. 314, no 04-jan, p. 203-206Article in journal (Refereed) Published
Abstract [en]

The effects of proton irradiation on carrier dynamics were investigated by time-resolved photoluminescence on different InGaAs/GaAs quantum-dot (QD) structures varying in QD surface density and substrate orientation, as well as thin InGaAs quantum wells. The carrier lifetimes in the dots are much less affected by proton irradiation than in the wells. Decrease in lifetimes of only 40 percent at the highest proton dose are observed in some of the QDs, whereas an similar to20 to similar to40-fold decrease is observed in the wells. Similar trends were observed for all quantum dot samples.

Place, publisher, year, edition, pages
2002. Vol. 314, no 04-jan, p. 203-206
Keywords [en]
quantum dots, proton irradiation, time-resolved photoluminescence, enhanced radiation hardness, lasers, damage
Identifiers
URN: urn:nbn:se:kth:diva-21596ISI: 000175997500046OAI: oai:DiVA.org:kth-21596DiVA, id: diva2:340294
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Marcinkevicius, Saulius

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