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Photoelectric properties of p(+)-n junctions based on 4H-SiC ion-implanted with aluminum
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2002 (English)In: Semiconductors (Woodbury, N.Y.), ISSN 1063-7826, E-ISSN 1090-6479, Vol. 36, no 6, 706-709 p.Article in journal (Refereed) Published
Abstract [en]

The photoelectric properties of p(+)-n junctions that were based on 4H-SiC ion-implanted with aluminum and were formed in lightly doped n-type epitaxial layers grown by chemical vapor deposition were studied. It is shown that such photodetectors combine in full measure the advantages of photostructures formed on the basis of Schottky barriers and epitaxial p-n junctions. The results of the theoretical calculation of spectral characteristics of ion-implanted photodetectors are in good agreement with experimental data. The structures feature an efficiency of collection of nonequilibrium charge carriers close to 100% in the spectral range of the photon energies of 3.5-4.25 eV.

Place, publisher, year, edition, pages
2002. Vol. 36, no 6, 706-709 p.
Keyword [en]
uv photodiodes
Identifiers
URN: urn:nbn:se:kth:diva-21598ISI: 000176025100020OAI: oai:DiVA.org:kth-21598DiVA: diva2:340296
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Hallén, Anders.

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Microelectronics and Information Technology, IMIT
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