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Silicon carbide detectors of high-energy particles
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2002 (English)In: Semiconductors (Woodbury, N.Y.), ISSN 1063-7826, E-ISSN 1090-6479, Vol. 36, no 6, 710-713 p.Article in journal (Refereed) Published
Abstract [en]

The results of studying 4H-SiC p(+)-n junctions ion-implanted with aluminum as detectors of high-energy particles are reported. The junctions were formed in SiC epitaxial films grown by chemical vapor deposition. The concentration of uncompensated donors was (3-5) x 10(15) cm(-3), and the charge-carrier diffusion length was L-p = 2.5 mum. The detectors were irradiated with 4.8-5.5-MeV alpha particles at 20degreesC. The efficiency of collection of the induced charge was as high as 0.35. The possibilities of operating SiC detectors at elevated temperatures (similar to500degreesC) are analyzed.

Place, publisher, year, edition, pages
2002. Vol. 36, no 6, 710-713 p.
Keyword [en]
implantation, junctions
Identifiers
URN: urn:nbn:se:kth:diva-21599ISI: 000176025100021OAI: oai:DiVA.org:kth-21599DiVA: diva2:340297
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Hallén, Anders.

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Microelectronics and Information Technology, IMIT
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