Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Electrical activation of high concentrations of N+ and P+ ions implanted into 4H-SiC
Show others and affiliations
2002 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 92, no 1, 549-554 p.Article in journal (Refereed) Published
Abstract [en]

Comparative Hall effect investigations are conducted on N- and P-implanted as well as on (N+P)-coimplanted 4H-SiC epilayers. Box profiles with three different mean concentrations ranging from 2.5x10(18) to 3x10(20) cm(-3) to a depth of 0.8 mum are implanted at 500 degreesC into the (0001)-face of the initially p-type (Al-doped) epilayers. Postimplantation anneals at 1700 degreesC for 30 min are conducted to electrically activate the implanted N+ and P+ ions. Our systematic Hall effect investigations demonstrate that there is a critical donor concentration of (2-5)x10(19) cm(-3). Below this value, N- and P-donors result in comparable sheet resistances. The critical concentration represents an upper limit for electrically active N donors, while P donors can be activated at concentrations above 10(20) cm(-3). This high concentration of electrically active P donors is responsible for the observed low sheet resistance of 35 Omega/square, which is about one order of magnitude lower than the minimum sheet resistance achieved by N implantation.

Place, publisher, year, edition, pages
2002. Vol. 92, no 1, 549-554 p.
Keyword [en]
phosphorus implantation, 4h-silicon carbide, growth, donors, endor, epr
Identifiers
URN: urn:nbn:se:kth:diva-21627DOI: 10.1063/1.1479462ISI: 000176314800087OAI: oai:DiVA.org:kth-21627DiVA: diva2:340325
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Linnarsson, Margareta K.

Search in DiVA

By author/editor
Linnarsson, Margareta K.
By organisation
Microelectronics and Information Technology, IMIT
In the same journal
Journal of Applied Physics

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 29 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf