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Electrical activation of high concentrations of N+ and P+ ions implanted into 4H-SiC
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2002 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 92, no 1, 549-554 p.Article in journal (Refereed) Published
Abstract [en]

Comparative Hall effect investigations are conducted on N- and P-implanted as well as on (N+P)-coimplanted 4H-SiC epilayers. Box profiles with three different mean concentrations ranging from 2.5x10(18) to 3x10(20) cm(-3) to a depth of 0.8 mum are implanted at 500 degreesC into the (0001)-face of the initially p-type (Al-doped) epilayers. Postimplantation anneals at 1700 degreesC for 30 min are conducted to electrically activate the implanted N+ and P+ ions. Our systematic Hall effect investigations demonstrate that there is a critical donor concentration of (2-5)x10(19) cm(-3). Below this value, N- and P-donors result in comparable sheet resistances. The critical concentration represents an upper limit for electrically active N donors, while P donors can be activated at concentrations above 10(20) cm(-3). This high concentration of electrically active P donors is responsible for the observed low sheet resistance of 35 Omega/square, which is about one order of magnitude lower than the minimum sheet resistance achieved by N implantation.

Place, publisher, year, edition, pages
2002. Vol. 92, no 1, 549-554 p.
Keyword [en]
phosphorus implantation, 4h-silicon carbide, growth, donors, endor, epr
URN: urn:nbn:se:kth:diva-21627DOI: 10.1063/1.1479462ISI: 000176314800087OAI: diva2:340325
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Linnarsson, Margareta K.
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Microelectronics and Information Technology, IMIT
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