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Low-temperature metal-organic vapor-phase epitaxy growth and performance of 1.3-mu m GaInNAs/GaAs single quantum well lasers
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2002 (English)In: Japanese Journal of Applied Physics, ISSN 0021-4922, E-ISSN 1347-4065, Vol. 41, no 2B, 1040-1042 p.Article in journal (Refereed) Published
Abstract [en]

GaInNAs/GaAs quantum-well (Q V) lasers emitting at 1.3 mum. were grown using metal-organic vapor-phase epitaxy (MOVPE) in the limit of very low growth rate and temperature. The material was characterized by photoluminescence (PL) Spectroscopy as well as by implementation in broad-area (BA) edge-emitting lasers. While the PL intensity was found to decrease by more than two orders of magnitude between 1175 and 1350 mn, the corresponding BA laser threshold current showed a much more modest increase. For a 1.28-mum laser the threshold current was 1.2 kA/cm(2) (1200 pin long devices), with a slope efficiency 0.24 W/A per facet and T-0 = 100 K. Comparison between PL emission properties and BA laser performance revealed a complex relationship. A high PL intensity does not necessarily lead to low threshold-current lasers. In these cases, the FWHM seems to be the more relevant parameter for QW optimization.

Place, publisher, year, edition, pages
2002. Vol. 41, no 2B, 1040-1042 p.
Keyword [en]
GaInNAs, 1.3 mu m, long wavelength, metalorganic vapor phase deposition, vertical-cavity surface-emitting laser, quantum well, photoluminescence, low temperature growth, 1.3 mu-m, room-temperature, low-threshold, deposition, operation, diodes
URN: urn:nbn:se:kth:diva-21644ISI: 000176451300022OAI: diva2:340342
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Hammar, Mattias
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Microelectronics and Information Technology, IMIT
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