High-performance epitaxial Na0.5K0.5NbO3 thin films by magnetron sputtering
2002 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 81, no 2, 337-339 p.Article in journal (Refereed) Published
Epitaxial Na0.5K0.5NbO3 (NKN) thin films have been grown on LaAlO3 substrates by rf magnetron sputtering of a stoichiometric, high-density, ceramic target. X-ray diffraction analysis showed c-axis oriented cube-on-cube growth. Micrometer size interdigital capacitor (IDC) structures were defined on the surface of the NKN film using photolithography. The electrical characterization at 1 MHz showed dissipation factor tan delta of 0.010, tunability 16.5% at 200 kV/cm and dielectric permittivity epsilon(r)=470. The frequency dispersion of epsilon(r) between 1 kHz and 1 MHz was 8.5% and the IDCs showed very good insulating properties with leakage current density on the order of 30 nA/cm(2) at 400 kV/cm. The polarization loop exhibits weak ferroelectric hysteresis with maximum polarization 23.5 muC/cm(2) at 600 kV/cm. These results are promising for tunable microwave devices based on rf sputtered NKN thin films.
Place, publisher, year, edition, pages
2002. Vol. 81, no 2, 337-339 p.
Other Materials Engineering
IdentifiersURN: urn:nbn:se:kth:diva-21649DOI: 10.1063/1.1492854ISI: 000176487400051OAI: oai:DiVA.org:kth-21649DiVA: diva2:340347
QC 201005252010-08-102010-08-102010-09-28Bibliographically approved