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Study of nitrogen, aluminium and boron incorporation in SiC layers grown by sublimation epitaxy
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2002 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 237, 1230-1234 p.Article in journal (Refereed) Published
Abstract [en]

Sublimation epitaxy is a growth technique viable for SiC epilayer fabrication since the method is technologically simple, the growth rate is high (up to 100 mum/h) and the as-grown surfaces arc very smooth. However, the remaining issues of purity and intentional doping control need to be studied and the behaviour understood before this method can be applied to device fabrication. We will show results of nitrogen, aluminium and boron incorporation in layers grown by sublimation epitaxy. The epilayers have been studied using electrical, secondary ion mass spectrometry and cathodoluminescence measurements as well as by low-temperature photoluminescence spectroscopy. Possible solutions to lower especially the nitrogen concentrations in epilayers are presented along with experimental results leading to epilayer net doping concentrations in the N-D - N-A similar to 10(15) cm(-3) range.

Place, publisher, year, edition, pages
2002. Vol. 237, 1230-1234 p.
Keyword [en]
impurities, mass transfer, physical vapor deposition processes, semiconducting silicon compounds
Identifiers
URN: urn:nbn:se:kth:diva-21659ISI: 000176512900064OAI: oai:DiVA.org:kth-21659DiVA: diva2:340357
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Linnarsson, Margareta K.

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Microelectronics and Information Technology, IMIT
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