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Crystallographic orientation dependence of impurity incorporation during epitaxial lateral overgrowth of InP
KTH, Superseded Departments, Electronics.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-0977-2598
2002 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 237, 1418-1422 p.Article in journal (Refereed) Published
Abstract [en]

Temporally resolved epitaxial lateral overgrowth (ELO) of 12 alternating layers of unintentionally-doped and S-doped InP layers has been conducted in a low-pressure hydride vapour phase epitaxy reactor. The growth was conducted in the openings on a (0 0 1) n-InP substrate and oriented along 30degrees off the [1 1 0] direction. Based on the analysis of the cleaved cross-sections by scanning electron microscopy and scanning capacitance microscopy, an inhomogeneous dopant distribution has been observed within the same ELO layer. This is explained by invoking different bonding configurations exposed to the incorporating dopant atoms in the different emerging planes.

Place, publisher, year, edition, pages
2002. Vol. 237, 1418-1422 p.
Keyword [en]
doping, epitaxial lateral overgrowth, hydride vapour phase epitaxy, semiconducting indium phosphide, vapor-phase epitaxy, growth
National Category
Condensed Matter Physics
URN: urn:nbn:se:kth:diva-21660ISI: 000176512900101OAI: diva2:340358

QC 20100525

NR 20140804Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2013-10-17Bibliographically approved

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