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Temperature dependence of the absorption coefficient in 4H-and 6H-silicon carbide at 355 nm laser pumping wavelength
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2002 (English)In: Physica status solidi. A, Applied research, ISSN 0031-8965, E-ISSN 1521-396X, Vol. 191, no 2, 613-620 p.Article in journal (Refereed) Published
Abstract [en]

We report on the absorption coefficient at 355 nm laser wavelength for 4H- and 6H-SiC over a wide temperature range. The measurements were carried out using a depth- and time-resolved free-carrier-absorption technique. The values of the absorption coefficient for the fundamental E perpendicular to

Place, publisher, year, edition, pages
2002. Vol. 191, no 2, 613-620 p.
Keyword [en]
carrier lifetime, photoluminescence, si, 4h
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URN: urn:nbn:se:kth:diva-21691ISI: 000176692200030OAI: oai:DiVA.org:kth-21691DiVA: diva2:340389
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Linnros, Jan

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Microelectronics and Information Technology, IMIT
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