Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias
2002 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 81, no 5, 883-885 p.Article in journal (Refereed) Published
The extension of stacking faults in a forward-biased 4H-SiC PiN diodes by the recombination-enhanced motion of leading partial dislocations has been investigated by the technique of optical emission microscopy. From the temperature dependence of the measured velocity of the partials, an activation energy of 0.27 eV is obtained. Based on this and analysis of the emission spectra, a radiative recombination level of 2.8 eV for the stacking fault, and two energy levels for the partial dislocation, a radiative one at 1.8 eV and a nonradiative at 2.2 eV, have been determined.
Place, publisher, year, edition, pages
2002. Vol. 81, no 5, 883-885 p.
defect reactions, semiconductors
IdentifiersURN: urn:nbn:se:kth:diva-21739DOI: 10.1063/1.1496498ISI: 000177008900033OAI: oai:DiVA.org:kth-21739DiVA: diva2:340437
QC 201005252010-08-102010-08-10Bibliographically approved