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Ferroelectric Pb(Zr,Ti)O-3/Al2O3/4H-SiC diode structures
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-8774-9302
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-8108-2631
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
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2002 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 81, no 5, 895-897 p.Article in journal (Refereed) Published
Abstract [en]

Pb(Zr,Ti)O-3 (PZT) films (450 nm thick) were grown on 4H-silicon carbide (SiC) substrates by a pulsed-laser deposition technique. X-ray diffraction confirms single PZT phase without a preferred orientation. Stable capacitance-voltage (C-V) loops with low conductance (<0.1 mS/cm(2), tan deltasimilar to0.0007 at 400 kHz) and memory window as wide as 10 V were obtained when 5-nm-thick Al2O3 was used as a high band gap (E(g)similar to9 eV) barrier buffer layer between PZT (E(g)similar to3.5 eV) and SiC (E(g)similar to3.2 eV). High-frequency (400 kHz) C-V characteristics revealed clear accumulation, and depletion behavior. Although the charge injection from SiC is the dominant mechanism for C-V hysteresis in PZT/Al2O3/SiC, negligible sweep rate dependence and negligible applied bias dependence were observed compared to that of PZT/SiC. By using room-temperature photoilluminated C-V measurements, the interface states as well as the charge trapping in the PZT/Al2O3 stacks have been calculated.

Place, publisher, year, edition, pages
2002. Vol. 81, no 5, 895-897 p.
Keyword [en]
electrical characteristics, band offsets, memory, transistor, silicon, growth
Identifiers
URN: urn:nbn:se:kth:diva-21740DOI: 10.1063/1.1497443ISI: 000177008900037OAI: oai:DiVA.org:kth-21740DiVA: diva2:340438
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Khartsev, SergiyZetterling, Carl-Mikael

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