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Electrical characteristics of metal-oxide-semiconductor capacitors on plasma etch-damaged silicon carbide
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-8108-2631
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-5845-3032
2002 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 46, no 9, 1375-1380 p.Article in journal (Refereed) Published
Abstract [en]

The characteristics of metal-oxide-semiconductor (MOS) capacitors formed on inductively coupled plasma (ICP) etch-damaged SiC have been investigated. MOS capacitors were prepared by dry-oxidation on ICP-etch-damaged n- and p-type. 6H- and 4H-SiC. The effect of a sacrificial oxidation treatment on the damaged surfaces has also been examined. Capacitance-voltage and current-voltage measurements of these capacitors were performed and referenced to those of simultaneously prepared control samples without etch damage. The effective interface densities (N-IT) and fixed oxide charges (Q(V)) of etch-damaged samples have been found to increase while the breakdown field strength (E-BD) of the oxide decreases. The barrier height (phib) at the SiC-SiO2, interface, determined from a Fowler-Nordheim analysis, decreased for MOS capacitors on etch-damaged surfaces. It has been found that a sacrificial oxidation treatment can improve the electrical characteristics of MOS capacitors on etch-damaged SiC.

Place, publisher, year, edition, pages
2002. Vol. 46, no 9, 1375-1380 p.
Keyword [en]
metal-oxide-semiconductor, silicon carbide, dry etch, inductively coupled plasma, 4h-silicon carbide, devices
Identifiers
URN: urn:nbn:se:kth:diva-21828ISI: 000177493800018OAI: oai:DiVA.org:kth-21828DiVA: diva2:340526
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Zetterling, Carl-Mikael

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