Reduction of the Schottky barrier height on silicon carbide using Au nano-particles
2002 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 46, no 9, 1433-1440 p.Article in journal (Refereed) Published
By the incorporation of size-selected Au nano-particles in Ti Schottky contacts on silicon carbide, we could observe considerably lower the barrier height of the contacts. This result could be obtained for both n- and p-type Schottky contacts using current-voltage and capacitance voltage measurements. For n-type Schottky contacts, we observed reductions of 0.19-0.25 eV on 4H-SiC and 0.15-0.17 eV on 6H-SiC as compared with particle-free Ti Schottky contacts. For p-type SiC, the reduction was a little lower with 0.02-0.05 eV on 4H- and 0.10-0.13 eV on 6H-SiC. The reduction of the Schottky barrier height is explained using a model with enhanced electric field at the interface due to the small size of the circular patch and the large difference of the barrier height between Ti and Au.
Place, publisher, year, edition, pages
2002. Vol. 46, no 9, 1433-1440 p.
nano-particles, Schottky barrier height, silicon carbide, image force lowering, electron-transport, contacts, devices
IdentifiersURN: urn:nbn:se:kth:diva-21829ISI: 000177493800028OAI: oai:DiVA.org:kth-21829DiVA: diva2:340527
QC 201005252010-08-102010-08-10Bibliographically approved