Be-doped low-temperature-grown GaAs material for optoelectronic switches
2002 (English)In: IEE Proceedings - Optoelectronics, ISSN 1350-2433, E-ISSN 1359-7078, Vol. 149, no 3, 111-115 p.Article in journal (Refereed) Published
Structural, electrical and recombination properties of Be-doped low-temperature MBE grown (LTG) GaAs have been investigated by using a number of different experimental techniques. These properties were analysed with respect to the applications of LTG GaAs in ultrafast optoelectronic devices. It has been found that a moderate Be-doping improves the structural quality of the layers and does not affect their semi-insulating behaviour. Electron and hole capture cross-sections, critical parameters for the design of optoelectronic devices from LTG GaAs, equal to sigma(n) = 1.1 x 10(-13) and sigma(p) = 1.8 x 10(-15) cm(2) were also determined.
Place, publisher, year, edition, pages
2002. Vol. 149, no 3, 111-115 p.
epitaxial gaas, dynamics
IdentifiersURN: urn:nbn:se:kth:diva-21830DOI: 10.1049/ip-opt:20020435ISI: 000177506300007OAI: oai:DiVA.org:kth-21830DiVA: diva2:340528
QC 201005252010-08-102010-08-10Bibliographically approved