Change search
ReferencesLink to record
Permanent link

Direct link
Be-doped low-temperature-grown GaAs material for optoelectronic switches
Show others and affiliations
2002 (English)In: IEE Proceedings - Optoelectronics, ISSN 1350-2433, E-ISSN 1359-7078, Vol. 149, no 3, 111-115 p.Article in journal (Refereed) Published
Abstract [en]

Structural, electrical and recombination properties of Be-doped low-temperature MBE grown (LTG) GaAs have been investigated by using a number of different experimental techniques. These properties were analysed with respect to the applications of LTG GaAs in ultrafast optoelectronic devices. It has been found that a moderate Be-doping improves the structural quality of the layers and does not affect their semi-insulating behaviour. Electron and hole capture cross-sections, critical parameters for the design of optoelectronic devices from LTG GaAs, equal to sigma(n) = 1.1 x 10(-13) and sigma(p) = 1.8 x 10(-15) cm(2) were also determined.

Place, publisher, year, edition, pages
2002. Vol. 149, no 3, 111-115 p.
Keyword [en]
epitaxial gaas, dynamics
URN: urn:nbn:se:kth:diva-21830DOI: 10.1049/ip-opt:20020435ISI: 000177506300007OAI: diva2:340528
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Marcinkevicius, Saulius
By organisation
Microelectronics and Information Technology, IMIT
In the same journal
IEE Proceedings - Optoelectronics

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 18 hits
ReferencesLink to record
Permanent link

Direct link