On the nature of ion implantation induced dislocation loops in 4H-silicon carbide
2002 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 92, no 5, 2501-2505 p.Article in journal (Refereed) Published
Transmission electron microscopy was used to investigate B-11, C-12, N-14, Al-27, Si-28, and Ar-37 ion-implanted 4H-SiC epilayers and subsequent defect formation after high temperature annealing. During the annealing process extrinsic dislocation loops of interstitial type are formed on the SiC basal plane with a depth distribution roughly corresponding to the distribution of the implanted ions. The investigation reveals that in samples where the implanted ions are substituting for a position in the silicon sublattice, generating an excess of interstitial silicon, the dislocation loops are more readily formed than in a sample implanted with an ion substituting for carbon.
Place, publisher, year, edition, pages
2002. Vol. 92, no 5, 2501-2505 p.
silicon-carbide, defects, irradiation, evolution, diffusion, alpha, tem
IdentifiersURN: urn:nbn:se:kth:diva-21836DOI: 10.1063/1.1499749ISI: 000177548500045OAI: oai:DiVA.org:kth-21836DiVA: diva2:340534
QC 201005252010-08-102010-08-10Bibliographically approved