Mixed mode circuit and device simulation of RF harmonic distortion for high-speed SiGeHBTs
2002 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 46, no 10, 1567-1571 p.Article in journal (Refereed) Published
Mixed mode circuit and device simulation has been used to investigate the linearity properties-harmonic distortion of high-speed low voltage SiGe heterojunction bipolar transistors (HBTs). The simulation test-circuit included the active device, modeled by finite element simulation, as well as passive elements in a SPICE circuit for DC-feed and AC-coupling of the RF-signal. Different Ge-profiles for reduced harmonic distortion have been investigated and compared to a conventional high-speed graded Ge-profile. To find an optimized Ge-profile for RF-applications other figure-of-merits, such as maximum cut-off frequency and minimum noise figure were also simulated. Using the same mixed mode simulation approach the design of the epitaxial collector doping profile for high breakdown voltage, high cut-off frequency and reduced harmonic distortion was investigated.
Place, publisher, year, edition, pages
2002. Vol. 46, no 10, 1567-1571 p.
mixed mode simulation, harmonic distortion, SiGe, HBT, noise figure, collector profile, transistors, design, noise
IdentifiersURN: urn:nbn:se:kth:diva-21853ISI: 000177687300015OAI: oai:DiVA.org:kth-21853DiVA: diva2:340551
QC 201005252010-08-102010-08-10Bibliographically approved