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Mixed mode circuit and device simulation of RF harmonic distortion for high-speed SiGeHBTs
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-6459-749X
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-5845-3032
2002 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 46, no 10, 1567-1571 p.Article in journal (Refereed) Published
Abstract [en]

Mixed mode circuit and device simulation has been used to investigate the linearity properties-harmonic distortion of high-speed low voltage SiGe heterojunction bipolar transistors (HBTs). The simulation test-circuit included the active device, modeled by finite element simulation, as well as passive elements in a SPICE circuit for DC-feed and AC-coupling of the RF-signal. Different Ge-profiles for reduced harmonic distortion have been investigated and compared to a conventional high-speed graded Ge-profile. To find an optimized Ge-profile for RF-applications other figure-of-merits, such as maximum cut-off frequency and minimum noise figure were also simulated. Using the same mixed mode simulation approach the design of the epitaxial collector doping profile for high breakdown voltage, high cut-off frequency and reduced harmonic distortion was investigated.

Place, publisher, year, edition, pages
2002. Vol. 46, no 10, 1567-1571 p.
Keyword [en]
mixed mode simulation, harmonic distortion, SiGe, HBT, noise figure, collector profile, transistors, design, noise
Identifiers
URN: urn:nbn:se:kth:diva-21853ISI: 000177687300015OAI: oai:DiVA.org:kth-21853DiVA: diva2:340551
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Malm, B. Gunnar

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