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A wide-band RF front-end for multiband multistandard high-linearity low-IF wireless receivers
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2002 (English)In: IEEE Journal of Solid-State Circuits, ISSN 0018-9200, E-ISSN 1558-173X, Vol. 37, no 9, 1162-1168 p.Article in journal (Refereed) Published
Abstract [en]

A wide-band radio-frequency (RF) front-end is designed with a balanced combined low-noise amplifier and a switching mixer (a low-noise converter) in RF Si-bipolar process with an f(T) of 25 GHz. The circuit achieves 20-dB conversion gain, higher than -4.5-dBm RF-to-IF IIP3 (+15.5-dBm OIP3) and less than 3.8-dB double-side-band noise figure in 900-MHz (e.g., GSM) and 1.9-GHz (e.g., WCDMA) frequency bands. The -1-dB compression point is -20 dBm at 13-mA dc current consumption from a single 5-V supply. The local-oscillator leakage to the input is less than -56 dBm in the 900-MHz band and less than -63 dBm in the 1.9-GHz band. The -3-dB bandwidth of the amplifier is larger than 3 GHz and a wide-band matching at the input with - 10 to -41-dB S-11 is achieved in the frequency bands of interest by applying a dual-loop wide-band active feedback. The die area is 0.69 x 0.9 mm(2). The circuit is suitable for area-efficient multiband multistandard low-IF receivers.

Place, publisher, year, edition, pages
2002. Vol. 37, no 9, 1162-1168 p.
Keyword [en]
dual-loop feedback, linearity, low-noise amplifier, low-IF architecture, mixer, noise figure, RF front-end, wireless receiver, cmos receiver
Identifiers
URN: urn:nbn:se:kth:diva-21864ISI: 000177775400012OAI: oai:DiVA.org:kth-21864DiVA: diva2:340562
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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CiteExportLink to record
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Citation style
  • apa
  • harvard1
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  • de-DE
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Output format
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