Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Increased nucleation temperature of NiSi2 in the reaction of Ni thin films with Si1-xGex
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2002 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 81, no 11, 1978-1980 p.Article in journal (Refereed) Published
Abstract [en]

The formation of a ternary solid solution NiSi1-xGex, instead of a mixture of NiSi and NiGe, is found during solid-state interactions between Ni and various Si1-xGex films ranging from pure Si to pure Ge. The lattice parameters of the solid solution of orthorhombic structure increase linearly with Ge content (x) as: a=5.24+0.19x Angstrom, b=3.25+0.16x Angstrom, and c=5.68+0.15x Angstrom. The specific resistivity increases from 17 muOmega cm for NiSi to 21 muOmega cm for NiSi0.71Ge0.29 and NiSi0.42Ge0.58. Although the Ge content rapidly drops from 30-60 to about 10 at. % in the solid solutions formed above 600 degreesC, the crystallographic structure remains unchanged and no NiSi2 [or Ni(Si,Ge)(2)] is found in the Si1-xGex samples even after annealing at 850 degreesC. Without Ge, the NiSi completely disappears at 750 degreesC. These results indicate a strong effect of the entropy of mixing in NiSi-NiGe on the nucleation of NiSi2.

Place, publisher, year, edition, pages
2002. Vol. 81, no 11, 1978-1980 p.
Keyword [en]
stability, silicon, silicides, alloy, cosi2, phase
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-21876DOI: 10.1063/1.1498869ISI: 000177864400015OAI: oai:DiVA.org:kth-21876DiVA: diva2:340574
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Seger, JohanZhang, Shi-LiRadamson, Henry H.
By organisation
Microelectronics and Information Technology, IMIT
In the same journal
Applied Physics Letters
Physical Sciences

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 21 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf