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Properties of highly strained InGaAs/GaAs quantum wells for 1.2-mu m laser diodes
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0003-3056-4678
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-9040-4740
2002 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 81, no 13, 2334-2336 p.Article in journal (Refereed) Published
Abstract [en]

The properties of 1.2-mum highly strained InGaAs quantum wells (QWs) grown on GaAs substrates have been analyzed. Optical gain spectra versus injection current and temperature, transparency current density, as well as other figures of merit were assessed from measurements on broad-area and ridge-waveguide lasers based on these QWs. Such active regions are of interest for a range of applications, including GaAs-based high-power lasers and vertical-cavity lasers for wavelengths beyond 1.2 mum.

Place, publisher, year, edition, pages
2002. Vol. 81, no 13, 2334-2336 p.
Keyword [en]
chemical-vapor-deposition, mu-m, gain
Identifiers
URN: urn:nbn:se:kth:diva-21902DOI: 10.1063/1.1509478ISI: 000178037600006OAI: oai:DiVA.org:kth-21902DiVA: diva2:340600
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Schatz, RichardHammar, Mattias

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