Carrier profiling of Al-doped 4H-SiC by scanning spreading resistance microscopy
2002 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 81, no 16, 3004-3006 p.Article in journal (Refereed) Published
Epitaxially-grown Al-doped 4H-SiC has been studied by scanning spreading resistance microscopy. The measured current shows good quantitative agreement with the chemical Al concentration in the range 2x10(16) to 2x10(20) atoms cm(-3). Simulations of the sample temperature distribution using finite element calculations predict a maximum temperature exceeding 750 K within 100 nm of the contact region at 7.5 V dc bias for an Al doping of 10(20) cm(-3). The heating causes a significant increase in the ionization of the dopants relative to that at room temperature. Due to the strong voltage dependence, the effect can be avoided by operating below 5 V dc bias where the temperature rise is shown to be negligible for all dopant concentrations.
Place, publisher, year, edition, pages
2002. Vol. 81, no 16, 3004-3006 p.
point-contact, silicon, devices
IdentifiersURN: urn:nbn:se:kth:diva-21951DOI: 10.1063/1.1514829ISI: 000178460500030OAI: oai:DiVA.org:kth-21951DiVA: diva2:340649
QC 201005252010-08-102010-08-10Bibliographically approved