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Experimental evaluation of the InP-InGaAs-HBT power-gain resonance
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2002 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 23, no 10, 579-581 p.Article in journal (Refereed) Published
Abstract [en]

An InP-InGaAs HBT has been evaluated that exhibits resonant hole modulation effects at a sufficiently low frequency for the resonance to be completely characterized by network analyzer measurements. It is shown that the frequency dependence of both the unilateral power gain and the current gain are modified by this effect, thus affecting the associated cutoff frequencies f(max) and f(T). A new power gain expression G(P) based on measured small-signal parameters is introduced to circumvent the ambiguity in the unilateral power gain. Finding f(max) and f(T) by means of extrapolation of G(P) and h(21), respectively, from a region below the,resonance frequency is proposed to yield appropriate estimates of the figures-of-merit for device applications.

Place, publisher, year, edition, pages
2002. Vol. 23, no 10, 579-581 p.
Keyword [en]
base push-out, high-frequency limitations, InP-HBT, unilateral power gain, heterojunction
URN: urn:nbn:se:kth:diva-21959DOI: 10.1109/led.2002.803759ISI: 000178497900003OAI: diva2:340657
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Willen, Bo G.
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