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Optical properties of donor-triad cluster in GaAs and GaN
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2002 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 81, no 17, 3158-3160 p.Article in journal (Refereed) Published
Abstract [en]

The effect of the transition energy of three-donor clusters on far infrared absorption in n-type semiconductor materials has been investigated by a multiconfigurational self-consistent-field model calculation and applied to GaAs and GaN systems. We show that it is crucial to consider the many-particle correlation effects within three-donor clusters. With electron correlation taken into account, the present results support the interpretation of a very recent unidentified peak energy observed in absorption measurement of GaN as due to electronic transitions in these clusters. We also corroborate the suggestion that the X line in GaAs arises from such transitions.

Place, publisher, year, edition, pages
2002. Vol. 81, no 17, 3158-3160 p.
Keyword [en]
shallow hydrogenic donors, molecules, semiconductors, energy, si
URN: urn:nbn:se:kth:diva-21971ISI: 000178624900014OAI: diva2:340669
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Persson, Clas
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