Spin properties of quantum wells with magnetic barriers. II. Inverted band ordering and spin polarized interface states
2002 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 66, no 15Article in journal (Refereed) Published
The electronic band-edge spectrum of the interface states in the magnetic semiconductor quantum wells based on narrow-gap semiconductors with mutually inverted band arrangement is studied within the envelope-function formalism. Interface states are shown to appear in these structures in the case of overlapping bulk bands of the constituents. The hybridization between the bare sp-electron states and the d states of the Mn atoms leads to spin splitting. The spin-splitting effect of the interface states as a function of external magnetic field, well width, band offsets, and fraction of the magnetic atoms, is studied. One essential result is that one can design a structure where the states localized at the interfaces only have one spin direction. The results give evidence of the perspective for using the magnetic semiconductor structures in spin electronics.
Place, publisher, year, edition, pages
2002. Vol. 66, no 15
surface-states, semiconductor heterojunctions, heterostructures, superlattices, field
IdentifiersURN: urn:nbn:se:kth:diva-22025DOI: 10.1103/PhysRevB.66.155325ISI: 000179080800104OAI: oai:DiVA.org:kth-22025DiVA: diva2:340723
QC 201005252010-08-102010-08-10Bibliographically approved