Observed critical thickness in selectively and non-selectively grown Si1-xGex layers on patterned substrates
2002 (English)In: Physica Scripta, ISSN 0031-8949, E-ISSN 1402-4896, Vol. T101, 42-44 p.Article in journal (Refereed) Published
Relaxation of SiGe layers grown selectively or non-selectively on oxide-patterned substrates using reduced pressure chemical vapor deposition was investigated. The influences of the buffer layer, the polycrystalline layer on the oxide and the opening size on the critical thickness for relaxation of SiGe layers have been studied in detail. High resolution reciprocal lattice mapping, atomic force microscopy and Normanski optical microscope have been used as the main characterization tools.
Place, publisher, year, edition, pages
2002. Vol. T101, 42-44 p.
molecular-beam-epitaxy, misfit dislocations, nonplanar surfaces, si, heterostructures
IdentifiersURN: urn:nbn:se:kth:diva-22074ISI: 000179465600011OAI: oai:DiVA.org:kth-22074DiVA: diva2:340772
QC 201005252010-08-102010-08-10Bibliographically approved