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Time-resolved micro-photoluminescence studies of dopant distribution in selectively regrown GalnP: Fe around VCSELs
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-4606-4865
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-0977-2598
2002 (English)In: Physica Scripta, ISSN 0031-8949, E-ISSN 1402-4896, Vol. T101, 89-91 p.Article in journal (Refereed) Published
Abstract [en]

We apply time-resolved photoluminescence with 1.5 mum spatial resolution for characterization ofcarrier trap distribution in semi-insulating Ga0.51In0.49P:Fe layers regrown around GaAs/AlGaAs circular vertical cavity surface emitting laser mesas using hydride vapour phase epitaxy. The carrier trapping times are in the range from 10 to 15 ps and quite uniformly distributed throughout the burying GaInP:Fe layer, suggesting that the layer is semi-insulating everywhere. Simulations show that, in addition to the Fe dopants, the layer contains other, unintended carrier traps. The photoluminescence spectra reveal that the regrown GaInP:Fe material has several distinct regions with different band gaps. This is attributed to differences in the In/Ga composition and/or CuPt ordering of the GaInP.

Place, publisher, year, edition, pages
2002. Vol. T101, 89-91 p.
Identifiers
URN: urn:nbn:se:kth:diva-22078ISI: 000179465600024OAI: oai:DiVA.org:kth-22078DiVA: diva2:340776
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Marcinkevicius, SauliusLourdudoss, Sebastian

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