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Characterization of Al-implanted 4H SiC high voltage diodes
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2002 (English)In: Physica Scripta, ISSN 0031-8949, E-ISSN 1402-4896, Vol. T101, 207-210 p.Article in journal (Refereed) Published
Abstract [en]

The properties of 4H-SiC chemical vapor deposition epitaxial layers were studied by different methods. The effects of structural defects in 4H-SiC epitaxial layers on electrical and luminescence properties of Al high dose ion implanted p(+)-n junctions were studied. It has been shown that the structural imperfections of low-doped layers affect some electrical characteristics of the ion doped p(+)-n junctions created in these epitaxial layers.

Place, publisher, year, edition, pages
2002. Vol. T101, 207-210 p.
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URN: urn:nbn:se:kth:diva-22080ISI: 000179465600053OAI: oai:DiVA.org:kth-22080DiVA: diva2:340778
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Hallén, Anders.

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