Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Morphological and phase stability of nickel-germanosilicide on Si1-xGex under thermal stress
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
Show others and affiliations
2002 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 92, no 12, p. 7193-7199Article in journal (Refereed) Published
Abstract [en]

Continuous and uniform Ni(Si,Ge) layers are formed on polycrystalline Si and Si0.42Ge0.58 substrate films at 500 degreesC by rapid thermal processing. The germanosilicide is identified as NiSi0.42Ge0.58, i.e., with the same Si-to-Ge ratio as in the substrate. The NiSi0.42Ge0.58 layer has agglomerated at 600 degrees C. This is accompanied by a diffusion of Ge out from the germanosilicide grains and the growth of a Ge-rich SiGe region in their close vicinity. These changes cause a slight variation in the atomic composition of Ni(Si,Ge) detectable for individual grains by means of energy dispersive spectroscopy. Above 600 degreesC, substantial outdiffusion of Ge from the Ni(Si,Ge) grains occurs concurrently with the migration of the grains into the substrate film away from the surface area leaving a Ge-rich SiGe region behind. These observations can be understood with reference to calculated Ni-Si-Ge ternary phase diagrams with and without the inclusion of NiSi2. When Ge is present, the Ni-based self-aligned silicide process presents a robust technique with respect to device applications.

Place, publisher, year, edition, pages
2002. Vol. 92, no 12, p. 7193-7199
Keywords [en]
self-aligned cosi2, integrated-circuits, interposed layer, silicides, films, silicon, alloys, nucleation, contacts, tisi2
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-22085DOI: 10.1063/1.1522491ISI: 000179495100035OAI: oai:DiVA.org:kth-22085DiVA, id: diva2:340783
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

Open Access in DiVA

No full text in DiVA

Other links

Publisher's full text

Search in DiVA

By author/editor
Seger, JohanZhang, Shi-Li
By organisation
Microelectronics and Information Technology, IMIT
In the same journal
Journal of Applied Physics
Physical Sciences

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 34 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf